Dr Martin Vaughan
-
Email
mpvaug@essex.ac.uk -
Location
Colchester Campus
Profile
Biography
Martin Vaughan is a theoretical and computational physicist, specializing in the semiconductor materials and devices. He is presently working on the Spin Space project, which seeks to exploit spin as a control parameter for information processing and optical communications in photonic applications.
Qualifications
-
PhD Semiconductor Physics University of Essex,
-
MSc Physics of laser communications University of Essex,
-
BSc (hons) Open University,
Research and professional activities
Research interests
Spin physics in low-dimensional semiconductors
First principles approaches to alloy scattering
Band structure in highly mismatched semiconductor alloys
Transport theory
Laser dynamics
Dynamics of spin VCSELS
THz devices
Publications
Journal articles (16)
Vaughan, MP., Susanto, H., Henning, ID. and Adams, MJ., Analysis of evanescently-coupled pairs of spin-polarised vertical-cavity surface-emitting lasers
Vaughan, M., Susanto, H., Henning, I. and Adams, MJ., The overlap factor model of evanescently-coupled, spin-polarised laser pairs. Journal of Optics
Vaughan, MP., Susanto, H., Henning, ID. and Adams, MJ., (2020). Dynamics of laterally-coupled pairs of spin-VCSELs. IEEE Journal of Quantum Electronics. 56 (3), 1-10
Vaughan, M., Susanto, H., Li, N., Henning, I. and Adams, M., (2019). Stability Boundaries in Laterally-Coupled Pairs of Semiconductor Lasers. Photonics. 6 (2), 74-74
Vaughan, MP. and Rorison, JM., (2018). Model expressions for the spin-orbit interaction and phonon-mediated spin dynamics in quantum dots. Semiconductor Science and Technology. 33 (1), 014001-014001
Vaughan, MP. and Rorison, JM., (2018). Modelling spin relaxation in semiconductor quantum wells: modifying the Elliot process. Semiconductor Science and Technology. 33 (9), 094003-094003
Donmez, O., Sarcan, F., Lisesivdin, SB., Vaughan, MP., Erol, A., Gunes, M., Arikan, MC., Puustinen, J. and Guina, M., (2014). Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures. Semiconductor Science and Technology. 29 (12), 125009-125009
Vaughan, MP., Murphy-Armando, F. and Fahy, S., (2012). First-principles investigation of the alloy scattering potential in dilute Si1−xCx. Physical Review B. 85 (16)
Henning, ID., Adams, MJ., Vaughan, M., Abraham, T., Sun, Y., Dyson, A., Moodie, DG., Rogers, DC., Cannard, PJ., Dosanjh, S., Skuse, M. and Firth, RJ., (2011). Novel Antenna-Integrated Photodiodes With Strained Absorbers Designed for Use as Terahertz Sources. IEEE Journal of Selected Topics in Quantum Electronics. 17 (1), 202-209
Vaughan, MP., Fahy, S., O'Reilly, EP., Ivanova, L., Eisele, H. and Dähne, M., (2011). Modelling and direct measurement of the density of states in GaAsN. physica status solidi (b). 248 (5), 1167-1171
Ivanova, L., Eisele, H., Vaughan, MP., Ebert, P., Lenz, A., Timm, R., Schumann, O., Geelhaar, L., Dähne, M., Fahy, S., Riechert, H. and O’Reilly, EP., (2010). Direct measurement and analysis of the conduction band density of states in dilutedGaAs1−xNxalloys. Physical Review B. 82 (16)
Vaughan, MP., Henning, I., Adams, MJ., Rivers, LJ., Cannard, P. and Lealman, IF., (2009). Mutual optical injection in coupled DBR laser pairs. Optics Express. 17 (3), 2033-2033
Henning, ID., Sun, Y., Vaughan, MP., Dyson, A., Abraham, T., Adams, MJ., Moodie, DG., Rogers, DC., Dosanjh, S. and Firth, R., (2009). Widely tunable optoelectronic source of continuous-wave terahertz radiation. Electronics Letters. 45 (24), 1252-1252
Vaughan, MP. and Ridley, BK., (2007). Electron-nitrogen scattering in dilute nitrides. Physical Review B. 75 (19)
Sun, Y., Vaughan, MP., Agarwal, A., Yilmaz, M., Ulug, B., Ulug, A., Balkan, N., Sopanen, M., Reentilä, O., Mattila, M., Fontaine, C. and Arnoult, A., (2007). Inhibition of negative differential resistance in modulation-dopedn-typeGaxIn1−xNyAs1−y∕GaAsquantum wells. Physical Review B. 75 (20)
Vaughan, MP. and Ridley, BK., (2005). Solution of the Boltzmann equation for calculating the Hall mobility in bulkGaNxAs1−x. Physical Review B. 72 (7)
Book chapters (1)
Vaughan, MP. and Ridley, BK., (2008). The Hall Mobility in Dilute Nitrides. In: Dilute III-V Nitride Semiconductors and Material Systems. Springer Berlin Heidelberg. 255- 281. 9783540745280
Conferences (6)
Vaughan, MP., Murphy-Armando, F. and Fahy, S., (2011). Alloy scattering of substitutional carbon in silicon: A first principles approach
Vaughan, MP. and Fahy, S., (2010). First principles calculations of the scattering cross section of substitutional carbon in silicon
Vaughan, MP. and Ridley, BK., (2007). Effect of non-parabolicity on the density of states for high-field mobility calculations in dilute nitrides
Vaughan, MP., (2007). From quantum dots to terahertz radiation
Vaughan, MP. and Ridley, BK., (2005). Solution of the Boltzmann equation for the electron Hall mobility in Ga 1-x N x As
Cheung, JY., Vaughan, MP., Mountford, JR. and Chunnilall, CJ., (2004). Correlated photon metrology of detectors and sources